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Photoemission and x-ray absorption studies of valence states in (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films exhibiting photo-induced magnetization

机译:中国价态的光电发射和X射线吸收研究   (Ni,Zn,Fe,Ti)$ _ {3} $ O $ _ {4} $薄膜表现出光致磁化

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摘要

By means of photoemission and x-ray absorption spectroscopy, we have studiedthe electronic structure of (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films, whichexhibits a cluster glass behavior with a spin-freezing temperature $T_f$ of$\sim 230$ K and photo-induced magnetization (PIM) below $T_f$. The Ni and Znions were found to be in the divalent states. Most of the Fe and Ti ions in thethin films were trivalent (Fe$^{3+}$) and tetravalent (Ti$^{4+}$),respectively. While Ti doping did not affect the valence states of the Ni andZn ions, a small amount of Fe$^{2+}$ ions increased with Ti concentration,consistent with the proposed charge-transfer mechanism of PIM.
机译:借助于光发射和X射线吸收光谱,我们研究了(Ni,Zn,Fe,Ti)$ _ {3} $ O $ _ {4} $薄膜的电子结构,该薄膜具有自旋的簇玻璃行为。冻结温度$ T_f $ of \ sim 230 $ K,光感应磁化强度(PIM)低于$ T_f $。发现Ni和Zn离子处于二价态。薄膜中的大多数Fe和Ti离子分别为三价(Fe $ ^ {3 +} $)和四价(Ti $ ^ {4 +} $)。尽管Ti掺杂不会影响Ni和Zn离子的价态,但少量Fe $ ^ {2 +} $离子会随着Ti浓度的增加而增加,这与PIM的电荷转移机理相一致。

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